Method for reducing stress in porous dielectric films
US8889233B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2006 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jun 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.