Film forming method, film forming apparatus and pattern forming method
US8889337B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Nov 2, 2007 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jun 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.