Optimizing lithographic processes using laser annealing techniques
US8889343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Dec 26, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.