Method for forming thin film utilizing sputtering target
US8889477B2 · kind B2 · utility
13Cited by
43References
33Claims
0Family size
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Key dates
| Filing date | Sep 5, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Sep 5, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/76
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.