Semiconductor devices and methods of manufacture thereof
US8889497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material. A top portion of the second semiconductive material of the semiconductor fin is removed, and a top portion of the first semiconductive material is exposed. A top portion first semiconductive material is removed from beneath the second semiconductive material. The first semiconductive material and the second semiconductive material are oxidized, forming a first oxide comprising a first thickness on the first semiconductive material and a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness. The second oxide is removed from the second semiconductive material, and manufacturing of the FinFET is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.