Finlike structures and methods of making same
US8889502B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.