Solid state source introduction of dopants and additives for a plasma doping process
US8889534B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2013 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Nov 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of doping a non-planar surface or a surface of a substrate subject to poor view factors is provided. The processing chamber comprises a window, walls, and a bottom of the processing chamber with oxygen-containing material, the processing chamber configured to supply oxygen radicals as an additive to doping materials. One or more quartz pieces are placed inside the processing chamber, where a magnet proximate to the processing chamber is configured to create a local magnetron plasma inside the processing chamber. Process gas containing an inert gas, sublimated doping materials, and optionally oxygen gas is flowed into the processing chamber; energy is applied to the process gas, generating a doping plasma used to expose a portion of the substrate surface while controlling operating variables to achieve target uniformity of dopant concentration, sheet resistance, degree of dopant clustering, and erosion of features on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.