Methods of forming a pattern on a substrate
US8889559B2 · kind B2 · utility
4Cited by
14References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.