UTBB CMOS imager having a diode junction in a photosensitive area thereof

US8890219B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Grenouillet · Voiron, FR
• Maud Vinet · Voiron, FR

Key dates

• Filing date: Oct 26, 2012
• Grant date: Nov 18, 2014
• Expiry date: Nov 13, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

An image sensor device is provided, including at least one transistor lying on a semiconductor-on-insulator substrate that includes a semi-conducting layer, in which a channel area of the transistor is disposed in a portion thereof, and an insulating layer separating the semi-conducting layer from a semi-conducting support layer, wherein the semi-conducting layer and the insulating layer extend beyond the channel area, and extend under at least a portion of source/drain regions of the transistor, wherein the semi-conducting support layer includes at least one photosensitive area including at least one P-doped region and at least one N-doped region forming a junction, the photosensitive area being disposed facing the transistor on a side of the channel area thereof and opposite a side of a gate electrode thereof, and wherein the insulating layer is configured to provide a capacitive coupling between the photosensitive area and the semi-conducting layer.