Semiconductor device
US8890230B2 · kind B2 · utility
5Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Oct 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes two floating gates, a control gate and a first dielectric layer. The floating gates are disposed on a semiconductor substrate. The control gate partially overlaps each of the floating gates, and a part of the control gate is disposed between the two floating gates. Furthermore, the first dielectric layer disposed between the two floating gates and the control gate has a fixed thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.