Lithographic focus and dose measurement using a 2-D target
US8891061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2009 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.