High-endurance phase change memory devices and methods for operating the same
US8891293B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 15, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0021
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Phase change based memory devices and methods for operating such devices described herein overcome the set or reset failure mode and result in improved endurance, reliability and data storage performance. A high current repair operation is carried out in response to a set or reset failure of a phase change memory cell. The higher current repair operation can provide a sufficient amount of energy to reverse compositional changes in the phase change material which can occur after repeated set and reset operations. By reversing these compositional changes, the techniques described herein can recover a memory cell which experienced a set or reset failure, thereby extending the endurance of the memory cell. In doing so, phase change based memory devices and methods for operating such devices are provided which have high cycle endurance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.