Method of forming a magnetoresistive random-access memory device
US8895323B2 · kind B2 · utility
2Cited by
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15Claims
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Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Dec 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming MRAM (magnetoresistive random access memory) devices is provided. A bottom electrode assembly is formed. A magnetic junction assembly is formed, comprising, depositing a magnetic junction assembly layer over the bottom electrode assembly, forming a patterned mask over the magnetic junction assembly layer, etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps, gap filling the magnetic junction assembly, and planarizing the magnetic junction assembly. A top electrode assembly is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.