Vertical conduction power electronic device and corresponding realization method
US8895370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Sep 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical conduction power device includes respective gate, source and drain areas formed in an epitaxial layer on a semiconductor substrate. The respective gate, source and drain metallizations are formed by a first metallization level. The gate, source and drain terminals are formed by a second metallization level. The device is configured as a set of modular areas extending parallel to each other. Each modular area has a rectangular elongate source area perimetrically surrounded by a gate area, and a drain area defined by first and second regions. The first regions of the drain extend parallel to one another and separate adjacent modular areas. The second regions of the drain area extend parallel to one another and contact ends of the first regions of the drain area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.