Patent · US Active

Production of an integrated circuit including electrical contact on SiC

US8895422B2 · kind B2 · utility

0Cited by

10References

7Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Roland Rupp · Achern, DE
Thomas Gutt · Taufkirchen, DE
Michael Treu · Villach, AT

Key dates

Filing date	Mar 14, 2013
Grant date	Nov 25, 2014
Priority date	—
Expiry date	Mar 14, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/64
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.