Method of forming a graphene cap for copper interconnect structures
US8895433B2 · kind B2 · utility
8Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jan 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.