Semiconductor die and method of forming Fo-WLCSP vertical interconnect using TSV and TMV
US8895440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a TSV wafer and semiconductor die mounted over the TSV wafer. A channel is formed through the TSV wafer. An encapsulant is deposited over the semiconductor die and TSV wafer. Conductive TMV are formed through the encapsulant over the conductive TSV and contact pads of the semiconductor die. The conductive TMV can be formed through the channel. A conductive layer is formed over the encapsulant and electrically connected to the conductive TMV. The conductive TMV are formed during the same manufacturing process. An insulating layer is formed over the encapsulant and conductive layer. A plurality of semiconductor die of the same size or different sizes can be stacked over the TSV wafer. The plurality of semiconductor die can be stacked over opposite sides of the TSV wafer. An internal stacking module can be stacked over the semiconductor die and electrically connected through the conductive TMV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.