Etching method of multilayer film
US8895454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2014 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jan 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.