Patent · US Active

High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells

US8895842B2 · kind B2 · utility

0Cited by

65References

15Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Shuran Sheng · Sunnyvale, US
Yong Kee Chae · Pleasanton, US
Stefan Klein · Meitingen, DE
Amir Al-Bayati · San Jose, US
Bhaskar Kumar · Santa Clara, US

Key dates

Filing date	Jun 9, 2009
Grant date	Nov 25, 2014
Priority date	—
Expiry date	Dec 18, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.