Dielectric treatment module using scanning IR radiation source
US8895942B2 · kind B2 · utility
38Cited by
29References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 16, 2008 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jul 25, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.