Dose measurement device for plasma-immersion ion implantation
US8895945B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 1, 2011 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Nov 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.