Method of forming finFET of variable channel width

US8896067B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Marc A. Bergendahl · Troy, US
• David V. Horak · South Burlington, US
• Shom Ponoth · Irvine, US
• Chih-Chao Yang · Glenmont, US
• Charles W. Koburger, III · Delmar, US

Key dates

• Filing date: Jan 8, 2013
• Grant date: Nov 25, 2014
• Expiry date: Jan 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Embodiments of present invention provide a method of forming a first and a second group of fins on a substrate; covering a top first portion of the first and second groups of fins with a first dielectric material; covering a bottom second portion of the first and second groups of fins with a second dielectric material, the bottom second portion of the first group and the second group of fins having a same height; exposing a middle third portion of the first and second groups of fins to an oxidizing environment to create an oxide section that separates the top first portion from the bottom second portion of the first and second groups of fins; and forming one or more fin-type field-effect-transistors (FinFETs) using the top first portion of the first and second groups of fins as fins under gates of the one or more FinFETs.