Semiconductor devices having gates including oxidized nickel

US8896122B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Van Mieczkowski · Apex, US
• Helmut Hagleitner · Knightdale, US
• Kevin Haberern · Cary, US

Key dates

• Filing date: May 12, 2010
• Grant date: Nov 25, 2014
• Expiry date: Jul 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.