Van Mieczkowski
22Patents
5h-index
21Co-inventors
65Inventor score
Filing activity: May 14, 2002 → Nov 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6825501B2 | Robust Group III light emitting diode for high reliability in standard packaging applications | Electricity | 50 | Expired |
| US7125737B2 | Robust Group III light emitting diode for high reliability in standard packaging applications | Electricity | 24 | Expired |
| US7557380B2 | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads | Electricity | 10 | Expired |
| US9991399B2 | Passivation structure for semiconductor devices | Electricity | 7 | Active |
| US9998109B1 | Power module with improved reliability | Emerging Cross-Sectional Technologies | 5 | Active |
| US8907350B2 | Semiconductor devices having improved adhesion and methods of fabricating the same | Electricity | 4 | Active |
| US8357996B2 | Devices with crack stops | Electricity | 4 | Active |
| US9142631B2 | Multilayer diffusion barriers for wide bandgap Schottky barrier devices | Electricity | 3 | Active |
| US7473938B2 | Robust Group III light emitting diode for high reliability in standard packaging applications | Electricity | 3 | Active |
| US8896122B2 | Semiconductor devices having gates including oxidized nickel | Electricity | 2 | Active |
| US9343383B2 | High voltage semiconductor devices including electric arc suppression material and methods of forming the same | Electricity | 2 | Active |
| US9536783B2 | Wafer-level die attach metallization | Electricity | 1 | Active |
| US8877611B2 | Devices with crack stops | Electricity | 1 | Active |
| US7557379B2 | Light emitting devices having a roughened reflective bond pad and methods of fabricating light emitting devices having roughened reflective bond pads | Electricity | 1 | Active |
| US10707858B2 | Power module with improved reliability | Emerging Cross-Sectional Technologies | 0 | Active |
| US8669563B2 | Light emitting devices having roughened/reflective contacts and methods of fabricating same | Electricity | 0 | Active |
| US10020244B2 | Polymer via plugs with high thermal integrity | Electricity | 0 | Active |
| US8810355B2 | Thin film resistor | Emerging Cross-Sectional Technologies | 0 | Active |
| US8570140B2 | Thin film resistor | Emerging Cross-Sectional Technologies | 0 | Active |
| US9607955B2 | Contact pad | Electricity | 0 | Active |
| USRE49167E1 | Passivation structure for semiconductor devices | General | 0 | Active |
| US8471269B2 | Light emitting devices having roughened/reflective contacts and methods of fabricating same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.