Semiconductor processing system having multiple decoupled plasma sources
US8900402B2 · kind B2 · utility
28Cited by
16References
20Claims
0Family size
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Key dates
| Filing date | May 10, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Jan 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.