Patent · US Active

Plasma processing systems with mechanisms for controlling temperatures of components

US8900404B2 · kind B2 · utility

2Cited by
4References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 19, 2009
Grant dateDec 2, 2014
Priority date
Expiry dateJun 1, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32623
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing system with improved component temperature control is disclosed. The system may include a plasma processing chamber having a chamber wall. The system may also include an electrode disposed inside the plasma processing chamber. The system may also include a support member disposed inside the plasma processing chamber for supporting the electrode. The system may also include a support plate disposed outside the chamber wall. The system may also include a cantilever disposed through the chamber wall for coupling the support member with the support plate. The system may also include a lift plate disposed between the chamber wall and the support plate. The system may also include thermally resistive coupling mechanisms for mechanically coupling the lift plate with the support plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.