Method of forming hardmask layer with alternating nanolayers
US8900665B2 · kind B2 · utility
7Cited by
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13Claims
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Key dates
| Filing date | Aug 27, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Forming a hardmask layer with an increased etch resistance based on alternating nanolayers of TiN with alternating residual stresses is disclosed. Embodiments include depositing a first nanolayer of TiN, and depositing a second nanolayer of TiN on the first nanolayer, wherein the first and second nanolayers have different residual stresses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.