System and method of monitoring and controlling atomic layer deposition of tungsten
US8900886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Jun 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32981
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of semiconductor processing comprises providing a semiconductor wafer in a processing chamber; feeding at least one tungsten-containing precursor in a gas state into the processing chamber for atomic layer deposition (ALD) of tungsten; feeding at least one reducing chemical in a gas state into the processing chamber; and monitoring a concentration of at least one gaseous byproduct in the chamber; and providing a signal indicating concentration of the at least one gaseous byproduct in the chamber. The byproduct is produced by a reaction between the at least one tungsten-containing precursor and the at least one reducing chemical during the ALD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.