Methods of forming semiconductor device structures, and related structures
US8900963B2 · kind B2 · utility
22Cited by
170References
30Claims
0Family size
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Key dates
| Filing date | Nov 2, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Sep 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.
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