Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
US8900999B1 · kind B1 · utility
399Cited by
4References
15Claims
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Key dates
| Filing date | Sep 25, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.