Plasma processing apparatus and method for controlling the same
US8906196B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2008 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jul 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a vacuum vessel, first, second and third power supplies which supply first, second and third RF voltages, a first electrode disposed within the vacuum vessel, a second electrode disposed inside or outside the vacuum vessel, a phase control unit for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of the same frequency, and a RF radiation unit which is supplied with the third RF voltage. The apparatus further comprises a voltage detector, and the phase control unit computes a phase difference between the second and third RF voltages based upon an output of the voltage detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.