Method of improving film non-uniformity and throughput
US8906791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jun 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an apparatus. The apparatus includes a showerhead to deliver a gas to the chamber, a volume, and an isolation valve between the volume and the showerhead. A gas is delivered the volume when the isolation valve is closed, pressurizing the volume. The isolation valve is opened to allow the gas to flow to the showerhead when the gas is being delivered to the volume. A material is formed on the wafer substrate using the gas. In some implementations, releasing the pressurized gas from the volume reduces the duration of time to develop a spatially uniform gas flow across the showerhead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.