Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device
US8906792B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.