Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization
US8906810B2 · kind B2 · utility
6Cited by
39References
17Claims
0Family size
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Key dates
| Filing date | May 7, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the low-k material while maintaining chuck temperature at about 45 to 80° C. and (b) metal hard mask rounding and Ti-based residues removal while maintaining chuck temperature at about 90 to 130° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.