Wet etch and clean chemistries for MoOx
US8906812B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jun 22, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jan 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing non-noble metal oxides from material (e.g., semiconductor material) used to make a microelectronic device includes providing the material comprising traces of the conducting non-noble metal oxides; applying a chemical mixture (or chemical solution) to the material; removing the traces of the non-noble metal oxides from the material; and removing the chemical mixture from the material. The non-noble metal oxides comprise MoOx, wherein x is a positive number between 0 and 3. The chemical solution comprises any one of HNO3-based chemicals, H2SO4-based chemicals, HCl-based chemicals, or NH4OH-based chemicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.