Gas mixture method for generating ion beam
US8907301B1 · kind B1 · utility
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14Claims
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Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gas mixture method for generating an ion beam is provided here. By dynamically tuning the mixture ratio of the gas mixture, lifetime of the ion source of an ion implanter can be prolonged. Accordingly, quality of ion beam can be maintained and maintenance fee is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.