Patent · US Active

Programmable resistance memory

US8908413B2 · kind B2 · utility

2Cited by
0References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 24, 2011
Grant dateDec 9, 2014
Priority date—
Expiry dateAug 24, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C13/0035
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.