Method of manufacturing a film bulk acoustic resonator with a loading element
US8910355B2 · kind B2 · utility
9Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2011 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Apr 18, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.