Patent · US Active

Method of manufacturing a film bulk acoustic resonator with a loading element

US8910355B2 · kind B2 · utility

9Cited by
7References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 12, 2011
Grant dateDec 16, 2014
Priority date
Expiry dateApr 18, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49155
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.