Integrating active matrix inorganic light emitting diodes for display devices
US8912020B2 · kind B2 · utility
46Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Dec 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A method of forming an active matrix, light emitting diode (LED) array includes removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.