Patent · US Active

Method for manufacture of bright GaN LEDs using a selective removal process

US8912025B2 · kind B2 · utility

6Cited by
76References
13Claims
0Family size

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Key dates

Filing dateNov 23, 2011
Grant dateDec 16, 2014
Priority date—
Expiry dateMar 31, 2033

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB23K2103/172
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.