Method of fabricating semiconductor device
US8912065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Jun 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
Abstract
A method of fabricating a semiconductor device is described. A substrate having first and second areas is provided. A first patterned mask layer having at least one first opening in the first area and at least one second opening in the second area is formed over the substrate, wherein the first opening is smaller than the second opening. A portion of the substrate is removed with the first patterned mask layer as a mask to form first and second trenches respectively in the substrate in the first and second areas, wherein the width and the depth of the first trench are less than those of the second trench. A first dielectric layer is formed at least in the first and second trenches. A conductive structure is formed on the first dielectric layer on at least a portion of the sidewall of each of the first and second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.