Backside metal ground plane with improved metal adhesion and design structures
US8912091B2 · kind B2 · utility
1Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1305
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.