Thin-film forming sputtering system
US8916034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Sep 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3417
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.