CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US8916061B2 · kind B2 · utility
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27References
16Claims
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Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.