Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
US8916434B2 · kind B2 · utility
6Cited by
24References
11Claims
0Family size
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Key dates
| Filing date | May 11, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | May 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of encapsulating a ferroelectric capacitor or ferroelectric memory cell includes forming encapsulation materials adjacent to a ferroelectric capacitor. forming a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and forming an FEO encapsulation layer over the ferroelectric oxide to provide additional protection from hydrogen induced degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.