Patent · US Active

Multichip power semiconductor device

US8916968B2 · kind B2 · utility

5Cited by

5References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joachim Mahler · Regensburg, DE
Thomas Bemmerl · Schwandorf, DE
Anton Prueckl · Schierling, DE

Key dates

Filing date	Mar 27, 2012
Grant date	Dec 23, 2014
Priority date	—
Expiry date	Mar 27, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.