Patent · US Active

Assessing thermal mechanical characteristics of complex semiconductor devices by integrated heating systems

US8920027B2 · kind B2 · utility

0Cited by

2References

15Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Michael Grillberger · Radebeul, DE
Matthias Lehr · Dresden, DE
Frank Kuechenmeister · Dresden, DE
Steffen Koch · Cologne, DE

Key dates

Filing date	Jul 20, 2011
Grant date	Dec 30, 2014
Priority date	—
Expiry date	Sep 15, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a semiconductor device or test structure, appropriate heating elements, for instance in the form of resistive structures, are implemented so as to obtain superior area coverage, thereby enabling a precise evaluation of the thermal conditions within a complex semiconductor device. In particular, the device internal heating elements may allow the evaluation of hot spots and the response of a complex metallization system to specific temperature profiles, in particular at critical areas, such as edge regions in which mechanical stress forces are typically highest in contact regimes in which the package substrate and the metallization system are directly connected.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.