Patent · US Active

Precision IC resistor fabrication

US8921199B1 · kind B1 · utility

4Cited by
9References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 20, 2013
Grant dateDec 30, 2014
Priority date
Expiry dateSep 20, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for fabricating a resistor in a dielectric layer of an integrated circuit (IC) is disclosed. The method may include creating a trench with a first side, a second side opposing the first side, and a bottom, in the dielectric layer, and depositing a conformal film onto the first side, the second side and the bottom of the trench. The method may also include removing the conformal film from the bottom and the second side of the trench, and filling the trench with an insulator. The method may also include removing the conformal film from the first side of the trench to form a receptacle adjacent to the insulator, and depositing electrically resistive material into the receptacle to form a resistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.