Measurement or inspecting apparatus
US8921781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.