Method of making semiconductor device
US8921888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Mar 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/403
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, and a first region, a second region and a third region are defined thereon. Then, a first well having a first conductive type is formed in the semiconductor substrate of the first region and the second region, respectively. A semiconductor layer partially overlapping the first well of the second region is formed. Furthermore, a second well having a second conductive type is formed in the semiconductor substrate of the third region and the first well of the second region respectively, where the second well of the second region is disposed underneath the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.